Process and composition for drying of gaseous hydrogen halides
US4925646A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 25, 1989 |
| Grant date | May 15, 1990 |
| Priority date | — |
| Expiry date | May 25, 2009 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01G1/06
- WIPO fieldChemical engineering
- WIPO sectorChemistry
Abstract
A process for drying a gaseous hydrogen halide of the formula HX, wherein X is bromine, Chlorine, FLuorine, or iodine, to remove water impurity therefrom, in which a scavenger precursor composition is provided, including a support having associated therewith partially or fully alkylated metal alkyl compounds or pendant groups. The precursor composition is reacted with gaseous hydrogen halide to convert the metal alkyl compounds and/or pendant functional groups to the corresponding metal halide compounds and/or pendant functional groups, which in turn react with the water impurity to produce an essentially completely water-free (below 0.1 ppm) gaseous hydrogen halide effluent. The process of the invention has utility for producing high purity, anhydrous gaseous hydrogen halides for semiconductor manufacturing operations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.