Semiconductor device
US4926235A · kind A · utility
5Cited by
2References
30Claims
0Family size
Inventors
Key dates
| Filing date | Oct 13, 1987 |
| Grant date | May 15, 1990 |
| Priority date | — |
| Expiry date | Oct 13, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/281
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is disclosed, which includes bipolar transistor each having an emitter, base and collector formed inside each protruding portion of a semiconductor substrate, and trenches for device isolation. The bipolar transistor and the trench are spaced apart from each other by a predetermined spacing. According to this arrangement, the width of a base contact becomes uniform and any change of transistor characteristics can be prevented effectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.