Pre-exposure method for increased sensitivity in high contrast resist development of positive working diazo ketone photoresist
US4931380A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 18, 1988 |
| Grant date | Jun 5, 1990 |
| Priority date | — |
| Expiry date | Nov 18, 2008 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/2022
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A high contrast developing process is described for use after pre-exposure to UV-visible radiation to produce increased sensitivity during lithographic processing of positive resist layers. Compared to samples which have not been subjected to the methods of this invention, sensitivity increases of a factor of 2-4 are to be expected. An additional benefit of low film loss from unexposed resist is obtained. The system disclosed is applicable to lithographic exposures utilizing electrons, photon (e.g. UV-visible, x-rays, etc.) and atomic or molecular charged particles. Specifically, as a result of the increased sensitivity, higher throughput during lithographic processing for the fabrication of photomasks and semiconductor devices is realized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.