Method of growing III-V semiconductor layers with high effective hole concentration
US4939102A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 17, 1989 |
| Grant date | Jul 3, 1990 |
| Priority date | — |
| Expiry date | Jan 17, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/915
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
36 We have discovered the III-V semiconductor layers with previously unattainably high effective hole concentrations can be produced by molecular growth processes (e.g. MBE) if an amphoteric dopant such as Be is used and if, during the growth of the highly doped III-V layer, the substrate is maintained at a temperature T.sub.g that is substantially lower than customarily used. For instance, a InGaAs layer with effective hole concentration 1.0.times.10.sup.20 cm.sup.-3 was grown at T.sub.g =450.degree. C., and a GaAs layer with effective hole concentration of 1.0.times.10.sup.20 cm.sup.-3 was grown at T.sub.g of 475.degree. C. The heavily doped III-V layers can be of device grade and can usefully be part of electronic devices such as high speed bipolar transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.