Method of preparing silicon carbide surfaces for crystal growth
US4946547A · kind A · utility
482Cited by
17References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 13, 1989 |
| Grant date | Aug 7, 1990 |
| Priority date | — |
| Expiry date | Oct 13, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/465
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention is a method of forming a substantially planar surface on a monocrystalline silicon carbide crystal by exposing the substantially planar surface to an etching plasma until any surface or subsurface damage caused by any mechanical preparation of the surface is substantially removed. The etch is limited, however, to a time period less than that over which the plasma etch will develop new defects in the surface or aggravate existing ones, and while using a plasma gas and electrode system that do not themselves aggravate or cause substantial defects in the surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.