Devices and process for producing devices containing silicon nitride films
US4960656A · kind A · utility
8Cited by
1References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 12, 1989 |
| Grant date | Oct 2, 1990 |
| Priority date | — |
| Expiry date | Dec 12, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02211
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Silicon nitride regions suitable for applications such as capping layers in integrated circuit fabrication are produced by an advantageous plasma deposition process. This process utilizes a combination of gases, including a silicon-containing gas, a nitrogen-containing gas, a fluorine-containing gas, and a hydrogen-containing gas. Silicon nitride having a low density of defect states and thus having excellent dielectric properties is produced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.