High T.sub.c superconductor - gallate crystal structures
US4962086A · kind A · utility
16Cited by
0References
29Claims
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Key dates
| Filing date | Jun 8, 1988 |
| Grant date | Oct 9, 1990 |
| Priority date | — |
| Expiry date | Jun 8, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49014
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
High T.sub.c oxide superconductive films can be formed on gallate layers, where the gallate layers include a rare earth element or a rare earth-like element. Combinations of rare earth elements and rare earth-like elements can also be utilized. The superconductive films can be epitaxially deposited on these gallate layers to form single crystals or, in the minimum, highly oriented superconductive layers. Any high T.sub.c superconductive oxide material can be utilized, but the best lattice matches are to superconductive materials including copper oxides. Examples include Y-Ba-Cu-O systems, Bi-based systems and Tl-based systems.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.