Cooling of a plasma electrode system for an etching apparatus
US4963713A · kind A · utility
39Cited by
6References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 19, 1989 |
| Grant date | Oct 16, 1990 |
| Priority date | — |
| Expiry date | Jan 19, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32935
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An etching apparatus has a method for stopping the generation of plasma responsive to the detection of poor cooling of a block electrode, which is provided with an electrode, to prevent the electrode from being cracked because of the thermal expansion of both electrodes so as to reduce the times of electrode exchange. The present invention also provides an etching method including a process of controlling the flow rate and pressure of a cooling gas supplied to a clearance between a substrate to be processed and a block electrode on which the substrate is mounted, so as to enable uniform etching to be applied to the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.