Method of production of light emitting diodes
US4966862A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Aug 28, 1989 |
| Grant date | Oct 30, 1990 |
| Priority date | — |
| Expiry date | Aug 28, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/857
Abstract
The invention is a method for preparing a plurality of light emitting diodes on a single substrate of a semiconductor material. The method is used for structures where the substrate includes an epitaxial layer of the same semiconductor material that in turn comprises layers of p-type and n-type material that define a p-n junction therebetween. The epitaxial layer and the substrate are etched in a predetermined pattern to define individual diode precursors, and deeply enough to form mesas in the epitaxial layer that delineate the p-n junctions in each diode precursor from one another. The substrate is then grooved from the side of the epitaxial layer and between the mesas to a predetermined depth to define side portions of diode precursors in the substrate while retaining enough of the substrate beneath the grooves to maintain its mechanical stability. Ohmic contacts are added to the epitaxial layer and to the substrate and a layer of insulating material is formed on the diode precursor. The insulating layer covers the portions of the epitaxial layer that are not covered by the ohmic contact, any portions of the one surface of the substrate adjacent the mesas, and the side portions …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.