Temperature controlled chuck for elevated temperature etch processing
US4971653A · kind A · utility
55Cited by
2References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 14, 1990 |
| Grant date | Nov 20, 1990 |
| Priority date | — |
| Expiry date | Mar 14, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67069
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A parallel plate plasma type etching apparatus is provided with a temperature control chuck 44 so that elevated substrate temperatures are controlled. With an elevated substrate temperature, the reaction rate is increased. With positive temperature control, the likelihood of damage to the semiconductor devices is significantly reduced. The chuck is provided with a large number of equally spaced electrical heaters 72 and control of the heaters is by a temperature sensor 74.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.