Method of fabricating a semiconductor pressure sensor
US4975390A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 8, 1987 |
| Grant date | Dec 4, 1990 |
| Priority date | — |
| Expiry date | Dec 8, 2007 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/135
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Herein disclosed is a semiconductor pressure sensor and a method of manufacture. The sensor includes a plate having a recess in its main surface. A diaphragm has a lower surface therof bonded to a first main surface of the plate and formed so as to have an upper surface having no holes therein. A piezoresistive layer is formed so as to be in contact with the diaphragm and is positioned so as to be at least partially over the recess. The resistance of the piezoresistive layer provides an indication of pressure applied to the diaphragm. The manufacturing method includes forming a piezoresistive layer of a single crystal substrate in a diaphragm without any recrystallization.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.