Reverse staggered type silicon thin film transistor
US4979006A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | May 26, 1989 |
| Grant date | Dec 18, 1990 |
| Priority date | — |
| Expiry date | May 26, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6746
Abstract
A reverse staggered type silicon thin film transistor includes a substrate having a gate electrode; a gate insulating layer on the substrate and the gate electrode, the gate insulating layer having a transistor-forming portion; a lower layer silicon film on the transistor-forming portion of the gate insulating layer and in contact therewith, the lower layer silicon film being formed at a first temperature and with a first thickness; an upper layer silicon film formed on the transistor-forming portion of the gate insulating layer at a second temperature which is lower than the first temperature and with a second thickness greater than the first thickness; and n-type silicon layer on the upper layer silicon film and in contact therewith; a source electrode on the n-type silicon layer; and a drain electrode on the n-type silicon layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.