Patent · US Expired

Method and apparatus for testing integrated electronic device

US4980639A · kind A · utility

37Cited by
8References
6Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 3, 1988
Grant dateDec 25, 1990
Priority date
Expiry dateMar 3, 2008

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01R31/305
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A method and apparatus for testing an integrated electronic device wherein the integrated electronic device to be tested is placed on a sample table. A predetermined position of the integrated electronic device is irradiated with the primary charged beam. A substrate current flowing through a substrate of the integrated electronic device is measured upon radiation of the primary charged beam, and then a potential of the predetermined position irradiated with the primary charged beam is nondestructively measured in accordance with secondary electrons emitted from the predetermined position. A function of the integrated electronic device is evaluated in accordance with the substrate current and the predetermined position potential. The function to be evaluated include leakage characteristics and a capacitance.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.