Method of manufacturing devices having superlattice structures
US4983540A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 18, 1988 |
| Grant date | Jan 8, 1991 |
| Priority date | — |
| Expiry date | Nov 18, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/962
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ion beam (113) focused into a diameter of at most 0.1 .mu.m bombards substantially perpendicularly to the superlattice layers of a one-dimensional superlattice structure and is scanned rectilinearly in a direction of the superlattice layers so as to form at least two parallel grooves (108, 109, 110, 111) or at least two parallel impurity-implanted parts (2109) as potential barrier layers, whereby a device of two-dimensional superlattice structure can be manufactured. At least two parallel grooves (114, 115, 116, 117) or impurity-implanted parts are further formed orthogonally to the potential barrier layers of the two-dimensional superlattice structure, whereby a device of three-dimensional superlattice structure can be manufactured. In addition, deposition parts (2403, 2404, 2405) may well be provided by further depositing an insulator into the grooves (108, 109, 110, 111, 114, 115, 116, 117) which are formed by the scanning of the ion beam. Owing to these expedients, the portions of the two-dimensional and three-dimensional superlattice structures can be manufactured with ease and at high precision.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.