Bonded substrate of semiconductor elements having a high withstand voltage
US4984052A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 10, 1989 |
| Grant date | Jan 8, 1991 |
| Priority date | — |
| Expiry date | Oct 10, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/914
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A bonded substrate comprises a first semiconductor substrate in which a plurality of semiconductor elements are formed, a second semiconductor substrate adhered to the first semiconductor substrate so as to support it by means of an insulating layer interposed therebetween, a first semi-insulating polysilicon layer interposed between the first semiconductor substrate and the insulating layer, and a second semi-insulating polysilicon layer interposed between the insulating layer and the second semiconductor substrate. The semi-insulating polysilicon layers serve to reduce the voltage applied to the insulating layer and to prevent the insulating layer from being etched.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.