Satoshi Yanagiya
10Patents
10h-index
11Co-inventors
61Inventor score
Filing activity: Oct 10, 1989 → Jan 22, 1997
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5321289A | Vertical MOSFET having trench covered with multilayer gate film | Electricity | 110 | Expired |
| US5126807A | Vertical MOS transistor and its production method | Electricity | 103 | Expired |
| US5242845A | Method of production of vertical MOS transistor | Electricity | 94 | Expired |
| US5578508A | Vertical power MOSFET and process of fabricating the same | Electricity | 85 | Expired |
| US5770514A | Method for manufacturing a vertical transistor having a trench gate | Electricity | 41 | Expired |
| US5084408A | Method of making complete dielectric isolation structure in semiconductor integrated circuit | Emerging Cross-Sectional Technologies | 29 | Expired |
| US5610422A | Semiconductor device having a buried insulated gate | Electricity | 20 | Expired |
| US5726088A | Method of manufacturing a semiconductor device having a buried insulated gate | Electricity | 19 | Expired |
| US5589421A | Method of manufacturing annealed films | Emerging Cross-Sectional Technologies | 16 | Expired |
| US4984052A | Bonded substrate of semiconductor elements having a high withstand voltage | Emerging Cross-Sectional Technologies | 12 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.