Insulated gate bipolar transistor
US4985743A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 19, 1988 |
| Grant date | Jan 15, 1991 |
| Priority date | — |
| Expiry date | Jul 19, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
Abstract
This invention is basically related to an insulated gate bipolar transistor comprising a first conductivity type semiconductor substrate, a second conductivity type semiconductor layer formed on the substrate and having a low concentration of impurities, a first conductivity type base layer formed on a surface of the semiconductor layer, a second conductivity type source layer formed on the surface of the base layer and having a channel region at at least one end thereof, a gate electrode, a source electrode and a drain electrode, and is characterized in that a voltage dropping portion is provided either inside the source layer or between the source layer and the source electrode. Accordingly an insulated gate bipolar semiconductor transistor having this configuration can prevent a latch up phenomenon caused by a voltage drop in a source layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.