Method of dry etching
US4986877A · kind A · utility
30Cited by
4References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 25, 1988 |
| Grant date | Jan 22, 1991 |
| Priority date | — |
| Expiry date | Jul 25, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32136
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A first etching for large side etching is conducted while maintaining the temperature of an article to be etched at a first temperature, and a second etching for small side etching is then conducted while maintaining the article to be etched at a second temperature lower than the first temperature. This enables the formation of various patterns in which the upper part of the sidewall is inclined at an angle smaller than that of the lower part of the sidewall.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.