Electron-detector diode biassing scheme for improved writing by an electron beam lithography machine
US4987311A · kind A · utility
3Cited by
1References
5Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 8, 1989 |
| Grant date | Jan 22, 1991 |
| Priority date | — |
| Expiry date | Aug 8, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/24578
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Disclosed is a biassing scheme for a beam position location apparatus (50) which comprises electron detector diodes (52) in an electron beam lithography machine (10) such that the detector diodes (52) deposit fewer secondary electrons (62) on a substrate (16) being processed by the electron beam (22) and thus reduce or eliminate any charge buildup on said substrate which deflect the electron beam (22) causing pattern distortion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.