Dry etching method
US4992136A · kind A · utility
233Cited by
7References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 25, 1988 |
| Grant date | Feb 12, 1991 |
| Priority date | — |
| Expiry date | Jul 25, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An article to be etched is contacted with a plasma of a mixed gas containing an etching gas and a film forming gas or a surface modification gas at a low temperature to effect the dry etching of the article, whereby the selectivity of etching can be made very high and the inclination angle of the side wall of pattern can be controlled at a desired level.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.