High speed MOSFET output buffer with low noise
US4992677A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 20, 1989 |
| Grant date | Feb 12, 1991 |
| Priority date | — |
| Expiry date | Mar 20, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K19/00361
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A semiconductor integrated circuit includes: a data output terminal; a first semiconductor element connected between a first operating potential point and the data output terminal; a second semiconductor element connected between the data output terminal and a second operating potential point; first control means connected to a control input terminal of the first semiconductor element; second control means connected to a control input terminal of the second semiconductor element; first generating means for generating a first predetermined voltage; and second generating means for generating a second predetermined voltage higher than the first predetermined voltage. When voltage at the data output terminal is higher than the second predetermined voltage, the first control means controls the first semiconductor element to be in the OFF-state, and the second control means controls the second semiconductor element to be in the ON-state to lower the voltage of the data output terminal to the second predetermined voltage. On the other hand, in the case where the voltage of the data output terminal is lower than that of the first predetermined voltage, the output of the first control means…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.