Katsuhiro Shimohigashi
60Patents
25h-index
79Co-inventors
91Inventor score
Filing activity: Oct 9, 1973 → Mar 4, 2003
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5170374A | Semiconductor memory | Electricity | 321 | Expired |
| US4661929A | Semiconductor memory having multiple level storage structure | Physics | 176 | Expired |
| US4455495A | Programmable semiconductor integrated circuitry including a programming semiconductor element | Electricity | 111 | Expired |
| US4701884A | Semiconductor memory for serial data access | Electricity | 102 | Expired |
| US5629898A | Dynamic memory device, a memory module, and a method of refreshing a dynamic memory device | Physics | 82 | Expired |
| US5550781A | Semiconductor apparatus with two activating modes of different number of selected word lines at refreshing | Physics | 71 | Expired |
| US4992677A | High speed MOSFET output buffer with low noise | Electricity | 61 | Expired |
| US5386135A | Semiconductor CMOS memory device with separately biased wells | Emerging Cross-Sectional Technologies | 56 | Expired |
| US4894696A | Dynamic random access memory having a trench capacitor | Emerging Cross-Sectional Technologies | 54 | Expired |
| US4811299A | Dynamic RAM device having a separate test mode capability | Physics | 51 | Expired |
| US4726021A | Semiconductor memory having error correcting means | Physics | 49 | Expired |
| US5126974A | Sense amplifier for a memory device | Physics | 44 | Expired |
| US4805147A | Stacked static random access memory cell having capacitor | Emerging Cross-Sectional Technologies | 41 | Expired |
| US4709350A | Semiconductor memory using multiple level storage structure | Physics | 41 | Expired |
| US5132771A | Semiconductor memory device having flip-flop circuits | Emerging Cross-Sectional Technologies | 40 | Expired |
| US5497023A | Semiconductor memory device having separately biased wells for isolation | Emerging Cross-Sectional Technologies | 39 | Expired |
| US4672586A | Semiconductor memory having circuit effecting refresh on variable cycles | Physics | 35 | Expired |
| US4656492A | Insulated gate field effect transistor | Electricity | 34 | Expired |
| US5148255A | Semiconductor memory device | Electricity | 34 | Expired |
| US6740958B2 | Semiconductor memory device | Electricity | 32 | Expired |
| US4849801A | Semiconductor memory device having increased capacitance for the storing nodes of the memory cells | Emerging Cross-Sectional Technologies | 30 | Expired |
| US4930112A | Semiconductor device having a voltage limiter | Physics | 29 | Expired |
| US4992985A | Method for selectively initiating/terminating a test mode in an address multiplexed DRAM and address multiplexed DRAM having such a capability | Physics | 26 | Expired |
| US4747082A | Semiconductor memory with automatic refresh means | Physics | 26 | Expired |
| US5324982A | Semiconductor memory device having bipolar transistor and structure to avoid soft error | Emerging Cross-Sectional Technologies | 26 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.