Carbon doping MOSFET substrate to suppress hit electron trapping
US4992840A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 21, 1989 |
| Grant date | Feb 12, 1991 |
| Priority date | — |
| Expiry date | Sep 21, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/235
Abstract
A MOSFET device having a near-micrometer or submicrometer channel length and designed to operated under conditions that cause generation of hot carriers is carbon doped in the silicon substrate at the gate oxide-silicon interface. The oxide-silicon interface can include hydrogen atoms. These atoms are mostly bonded to carbon atoms, more strongly than hydrogen bonds to silicon, so that hot carriers are less likely to dissociate the hydrogen atoms and form hot carrier trapping sites at the interface. Hot carrier aging is thus substantially reduced. This capability is particularly useful in submicrometer devices, avoiding need to reduce normal operating voltages.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.