Method of forming multiple nitride coating on silicon
US4996081A · kind A · utility
Inventors
Key dates
| Filing date | Apr 7, 1986 |
| Grant date | Feb 26, 1991 |
| Priority date | — |
| Expiry date | Apr 7, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02247
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In an integrated circuit process a composite dielectric layer is formed on a monocrystalline, polycrystalline or amorphous silicon substrate by thermally growing a first silicon nitride layer from a surface layer of the silicon and then depositing a layer of amorphous or polycrystalline silicon. A second nitride layer is thermally grown from the deposited silicon to form a nitride-silicon-nitride, termed nitsinitride, composite dielectric. At least a top layer of the nitsinitride dielectric can be oxidized to produce an alternative composite dielectric, termed oxidized nitsinitride. Variation of the thickness of the dielectric layers and/or repeating the layering process sequence results in composite dielectrics of different thicknesses and dielectric properties.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.