Power field effect devices having small cell size and low contact resistance
US4998151A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 13, 1989 |
| Grant date | Mar 5, 1991 |
| Priority date | — |
| Expiry date | Apr 13, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A multi-cellular power field effect semiconductor device includes a high conductivity layer of metal or a metal silicide disposed in intimate contact with the source region of the device. This high conductivity layer is self-aligned with respect to the aperture in the gate electrode through which the source region is diffused. The presence of this high conductivity layer allows a substantially smaller contact window to be employed for making contact between the final metallization and the source region. As a consequence, the aperture in the gate electrode and the cell size of the device can both be substantially reduced. The device has substantially improved operating characteristics. A method of producing the device is also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.