Chemical vapor deposition and chemicals with diarsines and polyarsines
US4999223A · kind A · utility
1Cited by
7References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 22, 1990 |
| Grant date | Mar 12, 1991 |
| Priority date | — |
| Expiry date | Feb 22, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S252/951
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A MOCVD process for depositing an arsenic-containing film utilizes an organoarsine compound having at least one As-As bond, in particular, diarsines and compounds having arsenic rings of 5 or 6 arsenic atoms.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.