Heterojunction bipolar transistor
US5001534A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 11, 1989 |
| Grant date | Mar 19, 1991 |
| Priority date | — |
| Expiry date | Jul 11, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/826
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A scalable and relatively easily manufacturable heterojunction bipolar transistor (HBT) comprises a thin (exemplarily 5-25 nm) emitter layer that serves as an etch stop layer and that furthermore passivates the extrinsic base region. The portion of the emitter layer that overlies the extrinsic base region is essentially fully depleted at all bias voltages in the normal operating range of the transistor. Base contact is established through the emitter layer, exemplarily by means of a metallized region on the emitter layer. A novel technique for carbon doping is also disclosed. Use of the novel technique makes possible a further embodiment of the inventive HBT, wherein base contact is made by means of Be implantation into the emitter layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.