High power (1,4 W)AlGaInP graded-index separate confinement heterostructure visible (.lambda.-658 nm) laser
US5003548A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 21, 1988 |
| Grant date | Mar 26, 1991 |
| Priority date | — |
| Expiry date | Sep 21, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3409
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Single quantum well short wavelength AlGaInP GRIN-SCH semiconductor lasers having high output power in the 660-680 nm range were prepared by organometallic vapor phase epitaxy. The laser active region preferably consists of a 100 .ANG. single Ga.sub.0.5 In.sub.0.5 P quantum well and 1600 .ANG. graded index regions on both sides of the well. The graded index regions were produced by lattice-matched graded composition (Al.sub.y Ga.sub.1-y).sub.0.5 In.sub.0.5 P quaternary alloys where y has a value from about 0.2 to 0.6. This structure reduces the broad-area threshold current compared to a double heterostructure laser to give pulsed thresholds as low as 1050 A/cm.sup.2. Total pulsed power of 1.4 W at 658 nm is available from an 80 .mu.m.times.300 .mu.m mesa-stripe laser. A differential quantum efficiency of up to about .about.56% was measured. Indicated uses include diode-pumped solid state laser applications and as a light source in optical disk drives and holographic scanners.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.