Multilayer electrodes for integrated circuit capacitors

US5005102A · kind A · utility

Assignee

• Ramtron Corporation · US

Inventor

• William Larson · Eden Prairie, US

Key dates

• Filing date: Jun 20, 1989
• Grant date: Apr 2, 1991
• Expiry date: Jun 20, 2009

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T29/435

Abstract

Disclosed is a multilayer capacitor structure in an integrated circuit, including a first electrode constructed by forming at least one layer over a substrate and forming a plate layer over the previous layer(s). A dielectric layer is formed over this first electrode, and a second electrode is established over the dielectric layer by forming a plate layer over the dielectric layer, and forming at least one additional layer over the plate layer. Each layer may serve one or more functions. Also disclosed is a further embodiment including constructing a first electrode by forming at least one layer on a substrate, forming a plate layer over the previous layer(s), and forming a dielectric layer over the first electrode. The resulting structure is then heated, preferably in an oxygen ambient, to oxidize the lower layer. A second electrode can then be formed over the dielectric layer.