Dry etch process for forming champagne profiles, and dry etch apparatus
US5013400A · kind A · utility
65Cited by
2References
33Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 30, 1990 |
| Grant date | May 7, 1991 |
| Priority date | — |
| Expiry date | Jan 30, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A two-step process for forming champagne profiles on semiconductor wafers that provide, when metallized, good reliability, microcracking-free contacts and vias is disclosed. Dry etch apparatus having electrodes in a triode configuration, two plasma forming regions, and a pressure control system operative to provide a wide setpoint pressure range is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.