Method of plasma etching with parallel plate reactor having a grid
US5015331A · kind A · utility
36Cited by
9References
34Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 10, 1990 |
| Grant date | May 14, 1991 |
| Priority date | — |
| Expiry date | Aug 10, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A parallel plate reactor having a grounded grid disposed between an RF powered electrode and a grounded electrode upon which a substrate is disposed. A method of utilizing the above apparatus consists of etching the substrate using a composition of 30-100% NF.sub.3 (nitrogen trifluoride) at 25 SCCM (standard cubic centimeter per minute) and 0-70% He (helium) at 75 SCCM to etch a layer of PECVD (plasma enchanced chemcial vapor deposition) Si.sub.3 N.sub.4 (silicon nitride). The etching takes place at 200 mtorr to 5 torr pressure and 50-400 watts RF power.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.