Process and system for the control of the focusing of a beam of monopolar charged particles
US5021669A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 8, 1990 |
| Grant date | Jun 4, 1991 |
| Priority date | — |
| Expiry date | May 8, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3007
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A process and a system are disclosed for controlling the focusing of a beam of monopolar charged particles which is used, for example, to vaporize substances in vacuum coating systems. The beam (S) has a cross-sectional area (Q) in a plane (E.sub.1) transverse to the axis of the beam. Perpendicular to plane (E.sub.1) there is a plane (E.sub.2), the surface normal (R) to which indicates the direction in which the change in the cross-sectional area (Q) is to occur. According to the invention, flux density fields (B.sub.1, B.sub.2) are applied, which are parallel on opposite sides to plane (E.sub.2) but have opposing directions. As a result, the change in the focusing of the beam has essentially no effect on any deflection of the beam; that is, it is possible to control the focusing without exerting any significant effect on the deflection.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.