Highly sensitive dry developable deep UV photoresist
US5023164A · kind A · utility
18Cited by
13References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 23, 1989 |
| Grant date | Jun 11, 1991 |
| Priority date | — |
| Expiry date | Oct 23, 2009 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/039
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Highly sensitive, highly absorbing deep ultraviolet and vacuum ultraviolet resists which comprise a novolak resin protected with an acid labile group and a photoinitiator which generates a strong acid upon exposure to deep ultraviolet or vacuum ultraviolet radiation. The exposed resists are reacted with organometallic compounds to form reactive ion etch resistant patterns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.