Rapid thermal processing method of making a semiconductor device
US5036023A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 16, 1989 |
| Grant date | Jul 30, 1991 |
| Priority date | — |
| Expiry date | Aug 16, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/02
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The inventive method of producing a device having non-alloyed ohmic contacts of common composition to both an n-doped and a p-doped region of a semiconductor body comprises deposition of a Ti/Pt layer on the p-doped as well as the n-doped region, followed by rapid thermal processing (RTP). Exemplarily, the device is a semiconductor laser, the n-doped region is InP, the p-doped region is InGaAs or InGaAsP, and RTP involves heating in the range 425.degree.-475.degree. C. for 10-100 seconds. The method comprises fewer processing steps than typical prior art methods, reduces the danger of fabrication error and of wafer breakage and, significantly, results in contacts that can be relatively thermally stable and can have very low specific contact resistance (exemplarily as low as 10.sup.-7 .OMEGA..multidot.cm.sup.2).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.