Self-aligned silicided base bipolar transistor and resistor and method of fabrication
US5045483A · kind A · utility
16Cited by
9References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 2, 1990 |
| Grant date | Sep 3, 1991 |
| Priority date | — |
| Expiry date | Apr 2, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/123
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A bipolar transistor and resistor are provided. Fabrication includes using a high temperature oxide to form sidewall spacers for the transistor contacts and/or to overlay the resistor portion of the device. Deposition of the HTO is combined with dopant drive-in so that fewer total steps are required. The process is compatible with MOS technology so that the bipolar transistor and resistor can be formed on a substrate along with MOS devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.