Transferred electron III-V semiconductor photocathode
US5047821A · kind A · utility
23Cited by
4References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 15, 1990 |
| Grant date | Sep 10, 1991 |
| Priority date | — |
| Expiry date | Mar 15, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2201/3423
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An improved transferred electron III-V semiconductor photocathode comprising an aluminum contact pad and an aluminum grid structure that improves quantum efficiency by removing a major obstacle to electrons escaping into the vacuum and controls dark spot blooming caused by overly bright photon emission sources.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.