N-type semiconducting diamond, and method of making the same
US5051785A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 22, 1989 |
| Grant date | Sep 24, 1991 |
| Priority date | — |
| Expiry date | Jun 22, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/014
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
N-type semiconducting diamond is disclosed, which is intrinsically, i.e., at the time of diamond formation, doped with n-type dopant atoms. Such diamond is advantageously formed by chemical vapor deposition from a source gas mixture comprising a carbon source compound for the diamond, and a volatile precursor compound for the n-type impurity species, so that the n-type impurity atoms are doped in the diamond film in situ during its formation. By such in situ formation technique, shallow n-type impurity atoms, e.g., lithium, arsenic, phosphorous, scandium, antimony, bismuth, and the like, may be incorporated into the crystal lattice in a uniform manner, and without the occurrence of gross lattice asperities and other lattice damage artifacts which result from ion implanation techniques. A corresponding chemical vapor deposition method of forming the n-type semiconducting diamond is disclosed. The n-type semiconducting diamond of the invention may be usefully employed in the formation of diamond-based transistor devices comprising pn diamond junctions, and in other microelectronic device applications.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.