Passivated polycrystalline semiconductors quantum well/superlattice structures fabricated thereof
US5051786A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 24, 1989 |
| Grant date | Sep 24, 1991 |
| Priority date | — |
| Expiry date | Oct 24, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/83
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The internal grain boundaries and intergranular spaces of polycrystalline semiconductor material may be passivated with an amorphous material, to substantially eliminate the dangling bonds at the internal grain boundaries. The passivated polycrystalline material of the present invention exhibits a lower electrically active defect density at the grain boundaries and intergranular space compared to unpassivated polycrystalline material. Moreover, large classes of amorphous passivating materials may be used for each known semiconductor material so that the passivating process may be readily adapted to existing process parameters and other device constraints. Passivated polycrystalline material may be employed to form the well or low energy bandgap layer of a quantum well device or superlattice, while still maintaining the required tunneling effect. By freeing quantum well devices from the requirement to use monocrystalline well material deeper wells may be produced, and a wider range of materials may be used, with high yields and low cost processes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.