Single crystal silicon
US5067989A · kind A · utility
8Cited by
0References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 22, 1990 |
| Grant date | Nov 26, 1991 |
| Priority date | — |
| Expiry date | Aug 22, 2010 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B15/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Single crystal silicon for a substrate of semiconductor integrated circuits is disclosed. Cu, Fe, Ni and Cr are contained as impurities in a concentration smaller than 0.1 ppta, respectively, and the total content of the impurities is less than 0.4 ppta. Oxygen-induced stacking faults are reduced to an absolute minimum.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.