Semiconductor device with multilayer base contact
US5068710A · kind A · utility
4Cited by
3References
43Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 22, 1989 |
| Grant date | Nov 26, 1991 |
| Priority date | — |
| Expiry date | Aug 22, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
On a semiconductor film to function as a lead-out electrode of a semiconductor element, a metal silicide film and a metal nitride film are successively provided, whereby alloying and inferior contact resistances attributed to heat during wiring with aluminum can be effectively suppressed, so that the reliability of a semiconductor device can be enhanced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.