Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry
US5072266A · kind A · utility
286Cited by
8References
14Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 27, 1988 |
| Grant date | Dec 10, 1991 |
| Priority date | — |
| Expiry date | Dec 27, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/126
Abstract
Power MOSFET apparatus, and method for its production, that suppresses voltage breakdown near the gate, using a polygon-shaped trench in which the gate is positioned in order to suppress oxide dielectric breakdown, using a shaped deep body junction that partly lies below the trench bottom to force voltage breakdown away from the trench surfaces and into the bulk of the semiconductor material, and using special procedures for growth of gate oxide at various trench corners.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.