Low-temperature plasma processor
US5078851A · kind A · utility
Inventors
Key dates
| Filing date | Jul 24, 1990 |
| Grant date | Jan 7, 1992 |
| Priority date | — |
| Expiry date | Jul 24, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/2001
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to a plasma processor in which a sample such as semiconductor substrate is processed with a plasma under a cooled state. An electric insulator is interposed between a sample holder for arranging the sample thereon and a cooling container for cooling the sample holder, so as to electrically insulate them, whereby a bias voltage applied to the sample holder and a voltage for generating the plasma can be prevented from leaking, so as to stabilize the process. In addition, the insulator is held in close contact with the sample holder and the cooling container through members of a thermal conductor, whereby the occurrence of non-uniformity during the processing of the sample and the occurrence of a dispersion in the qualities of processed samples among sample lots or among processors can be suppressed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.