Method of making complete dielectric isolation structure in semiconductor integrated circuit
US5084408A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 15, 1990 |
| Grant date | Jan 28, 1992 |
| Priority date | — |
| Expiry date | Oct 15, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/978
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
For controlling unwanted production of crystal defects from corners of isolated regions in a complete dielectric isolation structure, after at least one trench or groove is provided through a mask of an insulating film in a semiconductor substrate adhered to an insulating film of a base substrate, the mask is side-etched and the insulating film of the base substrate is selectively etched at the same time to expose corners of the semiconductor substrate. The exposed corners of the semiconductor substrate is then subjected to isotropic etching to remove a pointed portion therefrom. Thereafter, side surfaces of the semiconductor substrate exposed within the trench is oxidized to provide an insulating film for dielectric isolation which has rounded corners.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.