Plasma etch apparatus with conductive coating on inner metal surfaces of chamber to provide protection from chemical corrosion
US5085727A · kind A · utility
62Cited by
3References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 21, 1990 |
| Grant date | Feb 4, 1992 |
| Priority date | — |
| Expiry date | May 21, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S156/914
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An improved plasma etching apparatus is disclosed comprising an etch chamber having inner metal surfaces with a conductive coating formed thereon which is capable of protecting such inner metal surfaces from chemical attack by reactant gases such as halogen-containing gases used in said chamber during plasma etching processes. In a preferred embodiment, at least about 0.2 micrometers of a carbon coating is formed on the inner metal surfaces of the etch chamber by a plasma-assisted CVD process using a gaseous source of carbon and either hydrogen or nitrogen or both.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.