Method of making semiconductor device contact including transition metal-compound dopant source
US5086016A · kind A · utility
20Cited by
12References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 31, 1990 |
| Grant date | Feb 4, 1992 |
| Priority date | — |
| Expiry date | Oct 31, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/035
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A contact is provided in a self-aligned manner to a doped region a semiconductor substrate by first forming a layer of a transition metal-boride compound over a selected region on the substrate. A layer of a transition metal-nitride compound is formed over the layer of transition metal-boride compound, and the structure is heated to drive dopant from the layer of transition metal-boride compound into the substrate. The transition metal-boride/transition metal nitride layers are patterned to leave a contact to the doped region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.