Field effect transistor-bipolar transistor Darlington pair
US5086282A · kind A · utility
4Cited by
16References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 5, 1990 |
| Grant date | Feb 4, 1992 |
| Priority date | — |
| Expiry date | Oct 5, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/811
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A high frequency amplifying device comprises a field effect transistor-bipolar transistor darlington pair. Such a device combines the main desirable features of both field effect transistors and bipolar transistors, therefore, having a high input impedance that is typical of FETs and a high transconductance (or high current gain) which is typical of bipolar transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.