Planar semiconductor device having high breakdown voltage
US5086332A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 27, 1989 |
| Grant date | Feb 4, 1992 |
| Priority date | — |
| Expiry date | Sep 27, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/257
Abstract
A planar semiconductor device having a high breakdown voltage includes a semiconductor layer of a first conductivity type and a first semiconductor region of a second conductivity type selectively formed, together with the semiconductor layer, in the surface of the semiconductor layer forming a pn junction. The first semiconductor region is formed to have an impurity concentration higher than that of the semiconductor layer and therefore a resistivity higher than that of the semiconductor layer. A second semiconductor region of the second conductivity type having an impurity concentration lower than that of the first semiconductor region, is formed around and in contact with the first semiconductor region and together with the semiconductor layer constitutes a pn junction. A high resistance film is formed at least over the first semiconductor region and the second semiconductor region. A voltage is applied across the high resistance film to create a uniform electric field in the high resistance film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.