Plasma etching method
US5089083A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 20, 1990 |
| Grant date | Feb 18, 1992 |
| Priority date | — |
| Expiry date | Apr 20, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plasma etching method including the steps of mounting an object to be processed in a region formed between one electrode and an other electrode, introducing an etching gas into the region, setting an area of the contact surface of the other electrode, which is in contact with the etching gas, to a predetermined value in accordance with a predetermined selection ratio used in etching the object, generating plasma of the etching gas by applying a predetermined electric power between the electrodes after setting the area of the contact surface of the other electrode, which is in contact with the etching gas, to the predetermined value, and etching the object by the plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.