High sensitivity ultraviolet radiation detector
US5093576A · kind A · utility
135Cited by
11References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 15, 1991 |
| Grant date | Mar 3, 1992 |
| Priority date | — |
| Expiry date | Mar 15, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/221
Abstract
A high sensitivity radiation detecting photodiode formed in silicon carbide comprises a monocrystalline silicon carbide substrate; a first monocrystalline portion of silicon carbide upon the substrate and having a first conductivity type; a second monocrystalline portion of silicon carbide adjacent the first portion and having the opposite conductivity type from the first portion; and a p-n junction between the adjacent first and second portions. The photodiode provides a dark current density of no more than about 1.times.10.sup.-9 amps/cm.sup.2 at a reverse bias of -1.0 volts and at temperatures of 170.degree. C. or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.