Method and apparatus useful in the plasma etching of semiconductor materials
US5096536A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jun 12, 1990 |
| Grant date | Mar 17, 1992 |
| Priority date | — |
| Expiry date | Jun 12, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/2001
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a plasma reaction chamber or the like having a supporting electrode for receiving a selected substrate to be etched, a coolant gas is introduced into one region between this substrate and electrode for increasing the heat transfer capacity therebetween. Differential sealing means are provided adjacent to the coolant gas receiving region and define an enclosed space between the substrate and its supporting electrode to which a partial vacuum may be applied. This partial vacuum prevents any cooling gas from by-passing the sealing means and entering the plasma reaction chamber and producing deleterious chemical reaction effects therein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.